Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth

verfasst von
A. Rudevičs, A. Muižnieks, G. Ratnieks, A. Mühlbauer, Th Wetzel
Abstract

The fully transient axisymmetric model has been developed for calculation of phase boundaries in large (up to 200mm diameter) industrial floating zone (FZ) silicon single crystal growth with the needle-eye technique. The transient model is implemented in a specialized computer program. The model and program are based on a previously developed model and program for steady-state FZ process calculations. This transient approach allows studying of such substantially time-dependent process phases as the growth of the starting and ending cones of the crystal rod, which are particularly important for growth of large crystals in practice. Numerous calculations are carried out and the results for reducing crystal diameter during growth process are presented.

Organisationseinheit(en)
Institut für Elektroprozesstechnik
Externe Organisation(en)
University of Latvia
Siltronic AG
Typ
Konferenzaufsatz in Fachzeitschrift
Journal
Journal of crystal growth
Band
266
Seiten
54-59
Anzahl der Seiten
6
ISSN
0022-0248
Publikationsdatum
15.05.2004
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie
Elektronische Version(en)
https://doi.org/10.1016/j.jcrysgro.2004.02.029 (Zugang: Geschlossen)