Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth

verfasst von: Th Wetzel, J. Virbulis, A. Muiznieks, W. Von Ammon, E. Tomzig, G. Raming, M. Weber
Abstract: A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300mm Si CZ growth experiments with 200kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.
Organisationseinheit(en): Institut für Elektroprozesstechnik
Externe Organisation(en): Siltronic AG
University of Latvia
Center for Processes Analysis and Research
Typ: Konferenzaufsatz in Fachzeitschrift
Journal: Journal of crystal growth
Band: 266
Seiten: 34-39
Anzahl der Seiten: 6
ISSN: 0022-0248
Publikationsdatum: 15.05.2004
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie
Elektronische Version(en): https://doi.org/10.1016/j.jcrysgro.2004.02.027 (Zugang: Geschlossen)

BibTeX

@article{f1b30e46c78c47208972e053d982a812,
title = "Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth",
abstract = "A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300mm Si CZ growth experiments with 200kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.",
keywords = "A1. Fluid flows, A1. Heat transfer, A2. Czochralski method, A2. Single crystal growth, B2. Semiconducting silicon",
author = "Th Wetzel and J. Virbulis and A. Muiznieks and {Von Ammon}, W. and E. Tomzig and G. Raming and M. Weber",
note = "Funding Information: The authors would like to thank Prof. Dr. Yuri Gelfgat, Dr. Leonid Gorbunov and their team for the preparation of the model experiment data. This work was supported by the Federal Department of Education and Research of Germany under the contract No. 01M2973A. The authors alone are responsible for the content. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; Fourth International Workshop on Modeling ; Conference date: 04-11-2003 Through 07-11-2003",
year = "2004",
month = may,
day = "15",
doi = "10.1016/j.jcrysgro.2004.02.027",
language = "English",
volume = "266",
pages = "34--39",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-3",
}