Showing results 621 - 640 out of 770
2001
Baake E. Grundlagen elektrothermischer Verfahren: Folge 2: Induktives Schmelzen. Elektrowärme international : EWI ; Zeitschrift für elektrothermische Prozesse. 2001;59(2):77-78.
Baake E. Grundlagen elektrothermischer Verfahren: Folge 4: Indirekte Widerstandserwärmung. Elektrowärme international : EWI ; Zeitschrift für elektrothermische Prozesse. 2001;59(4):161-162.
Baake E. Grundlagen elektrothermischer Verfahren: Folge 3: Konduktive Erwärmung. Elektrowärme international : EWI ; Zeitschrift für elektrothermische Prozesse. 2001;59(3):116-117.
Baake E, Nacke B, Jakovics A, Umbrashko A. Heat and mass transfer in turbulent flows with several recirculated flow eddies. Magnetohydrodynamics. 2001;37(1-2):13-22. doi: 10.22364/mhd.37.1-2.2
Baake E, Dötsch E, Nacke B. Strömung und Temperaturverteilung in Tiegelinduktoröfen zum Speichern und Gießen von Gusseisen. Elektrowärme international : EWI ; Zeitschrift für elektrothermische Prozesse. 2001;59(1):15-20.
Bernier F. Optimierung des thermischen Verhaltens metallischer Schmelzen im Kaltwand-Induktions-Tiegelofen. Düsseldorf: VDI-Verl, 2001. (Fortschritt-Berichte VDI).
Jakovics A, Baake E. Bericht vom International Scientific Colloquium "Modelling for Saving Resources" in Riga, Lettland. Elektrowärme international : EWI ; Zeitschrift für elektrothermische Prozesse. 2001;59(2):111-113.
Jakovics A, Kirpo M, Veispals B, Nacke B, Baake E. Measurement of the electrical conductivity of zircon at high temperatures. In Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001. p. 135-141
Madzulis I, Muiznieks A, Mühlbauer A, Raming G. Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. p. 37-38
Madzulis I, Muiznieks A, Mühlbauer A, Krauze A. Microscopic model of crystal growth using the mean field approximation. In Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001. p. 6
Mühlbauer A, Muiznieks A, Raming G, Ratnieks G. 2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth: Relation between Growth Process and Crystal Quality. In Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001
Mühlbauer A, Muiznieks A, Wetzel T, Rudevičs A. Mathematical modelling of the industrial CZ crystal growth: melt hydrodynamics control by imposed magnetic fields. In Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001
Muiznieks A, Raming G, Mühlbauer A, Ratnieks G. Numerical 3D study of the rotational striations in FZ-grown crystal. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. p. 21-22
Muiznieks A, Raming G, Mühlbauer A. Numerical investigation of the influence of EM-Fields on fluid motion and resistivity distribution during Floating-Zone (FZ) growth of large silicon single crystals. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. p. 35-36
Muiznieks A, Buligins L, Krauze A, Mühlbauer A. Simulation of CZ single crystal growth from Si-Ge solution. In Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001
Muiznieks A, Raming G, Mühlbauer A, Virbulis J, Hanna B, von Ammon W. Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. p. 33-34
Muižnieks A, Raming G, Mühlbauer A, Virbulis J, Hanna B, Ammon WV. Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - Numerical model and qualitative considerations. Journal of crystal growth. 2001 Aug;230(1-2):305-313. Epub 2001 Jul 10. doi: 10.1016/S0022-0248(01)01322-7
Nacke B, Wrona E. Analyse und Optimierung des Energieverbrauchs von induktiven Schmiede-Erwärmern. In Workshop Reihe Elektroprozesstechnik: elektromagnetische Verfahrenstechniken : induktives Erwärmen und Schmelzen, dielektrische Erwärmung, elektromagnetische Beeinflussung ; 18. - 19. Okt. 2001, Seminar- und Ferienhaus "Zur Talsperre" Ilmenau, OT Heyda. Ilmenau. 2001. 10
Nacke B, Behrens T, Baake E, Blinov Y, Lopukh D, Petchenkov A et al. Transverse flux heating in modern energy saving lines for metal rolling and treatment. In Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001. p. 589-596
Nauvertat G, Falter-Braun P, Mühlbauer A, Nacke B, Nikanorov A. Optimierte Auslegung von induktiven Querfeld-Banderwärmern. Metall. 2001;55(12):51-55.
